It is defined as a gain because a small signal at the base produces a much larger signal at the collector. Collectoremitter voltage collectorbase voltage collectoremitter voltage emitterbase voltage base current collector current total power dissipation. Also made by philips and related manufacturing plants. Marking of electronic components, smd codes 2f, 2f, 2f. Rating collectoremitter voltage collectorbase voltage emitterbase voltage collector current continuous total device dissipation ta25c. Collector s8550 features z complimentary to s8050 z collector current. Npn transistor datasheet, npn transistor pdf, npn transistor data sheet, datasheet, data sheet, pdf, page 2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. I get datasheets from your circuit design determines the output current. N stands for ntype material and p stands for ptype material. The datasheet states the maximum allowed output current and your design should limit its. An npn transistor has the base as the middle p layer, and the emitter and collector as the two n layers sandwiching the base. The datasheet states the maximum allowed output current and your design should limit its output current to less.
These devices are particularly suited as drivers in highvoltage. For an npn, the baseemitter behaves as a forwardbiased diode and the basecollector behaves as a reversebiased diode. Transistors peter mathys ecen 1400 transistor families there are two major families of transistors. A selection of the most commonly used transistors and more. Collectoremitter voltage collectorbase voltage emitterbase voltage base current collector current total power dissipation. The central semiconductor 2n3439 and 2n3440 are silicon npn transistors designed for consumer and industrial lineoperated applications. Unit conditions vceosus collectoremitter sustaing voltage 60 v ic200ma, ib0 vcersus collectoremitter sustaing voltage 70 v ic200ma, rbe100.
These devices are particularly suited as drivers in highvoltage low current inverters, switing and series regulators. Contains pinouts for connectors and information about how to build cables etc. Pnp germanium transistor intended as low power amplifier switch in af applications. Silicon npn triple diffused type pct process transistor, c5353 pdf download toshiba, c5353 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross.
This bipolar junction transistors maximum emitter base voltage is 7 v. Bipolar junction transistors bjt and fieldeffect transistorsfet. Td2401 date published july 1995 p printed in japan 2sc5010 description the 2sc5010 is an npn epitaxial silicon transistor designed for use in low noise and small signal amplifiers from vhf band to l band. Power dissipation 25c dc current gain hfe 4 a vce sat 1.
Absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Stmicroelectronics, alldatasheet, datasheet, datasheet search site for electronic. Bc372, bc373 high voltage darlington transistors npn silicon features pb. C3209 datasheet pdf npn transistor nec, 2sc3209 datasheet, c3209 pdf, c3209 pinout, c3209 equivalent, c3209 transistor, c3209 schematic, c3209 manual. This parameter is the collector to base breakdown voltage of a bipolar transistor. Toshiba transistor silicon pnp epitaxial type pct process 2sa966 audio power amplifier applications complementary to 2sc2236 and 3w output applications. Toshiba transistor silicon pnp epitaxial type pct process 2sc1959 audio frequency low power amplifier applications driver stage amplifier applications switching applications excellent hfe linearity. Mi ls19500120c amendment 3 10 may 1976 superseding amendment 2 7 august 197a military specification semiconductor device, transistor. Transistor specifications explained electronics notes. The breakdown voltage is where the transistor will stop operating or be destroyed if it is given an input voltage of that amount. Amplifier transistornpn silicon, 2n4410 datasheet, 2n4410 circuit, 2n4410 data sheet.
Emt1 umt1n imt1a general purpose transistor dual transistors datasheet loutline parameter tr1 and tr2 emt6 umt6 vceo50v ic150ma emt1 umt1n sc107c sot363 smt6 lfeatures 1two 2sa1037ak chips in a emt, umt or smt package. Description this family of hi gh frequency, epitaxial planar transistors feature low saturation voltage. To66 qualified per milprf19500441 devices 2n3740 2n3741 qualified level jan jantx jantxv. Unit dc current gain hfe note 1 v ce 10 v, ic 20 ma 40 200.
If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Nov 08, 2009 look at the datasheet of any transistor like the 2n3904 for example. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Datasheets 2sa1036kpt, bc850b, bc850bw, fmmt2907a, kst2907a, mmbt2907a, mmbt2907at. C380 datasheet, c380 pdf, c380 data sheet, datasheet, data sheet, pdf. Datasheet catalog for electronic components integrated. Text in other languages may differ dimensions whd incl. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design.
To3 qualified per milprf19500370 devices 2n3442 qualified level jan jantx jantxv. It is the maximum collector base voltage again it is generally measured with the emitter left open circuit. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. Free packages are available maximum ratings rating symbol value unit collector. Toshiba transistor silicon pnp epitaxial type pct process. Npn, silicon, switching, lowpower type 2n706 this amendment forms a part of military specification mlls19500120c. Vcbo collector base voltage ie 0 vceo collector emitter voltage ib 0. Marking of electronic components, smd codes 2f, 2f, 2f, 2fw, 2fp, 2fs, 2ft. Page 2 of 4 electrical characteristics t ambient25. Download 2n3440 datasheet from central semiconductor. Ta25c symbol 2n3439 2n3440 units collectorbase voltage vcbo 450 300 v collectoremitter voltage vceo 350 250 v. Emitter voltage bc372 bc373 vceo 100 80 vdc collector. Pricing and availability on millions of electronic components from digikey electronics. Look at the datasheet of any transistor like the 2n3904 for example.
Of course you need the datasheet of the transistor to design a circuit using it. Download 2n3440 datasheet from continental device india limited. Unit dc current gain hfe note 1 v ce 10 v, ic 20 ma 40 200 gain bandwidth product ft vce 10 v, ic 20 ma 5. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. These devices are also available in to 39 and low profile u4 and.
Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors page 1101. Onsemi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Vce limits of the transistor that must be observed for reliable operation, i. R1 is not part of the transistor, its just a typical load to work against for the simulation. May 02, 2016 c3209 datasheet pdf npn transistor nec, 2sc3209 datasheet, c3209 pdf, c3209 pinout, c3209 equivalent, c3209 transistor, c3209 schematic, c3209 manual. With a collector current of 10ma and a base current of 1ma then its typical as shown on the graph collector saturation voltage is less than 0.
This bipolar junction transistor has a minimum operating temperature of 65 c and a maximum of 200 c. Bjts have 3 terminals and come in two varieties, as npn and pnp transistors. Hfe has minimum and maximum values, though both may not be listed. Silicon offers good overall performance with a base emitter junction turn on voltage of around 0. Oct 19, 2015 30f126 pdf, 30f126 datasheet, 30f126 pdf, 30f126 pinout, 30f126 data, 30f126 igbt, circuit, ic, manual, substitute, parts, schematic, reference. Description the 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in jedec to39 metal case designed for use in consumer and industrial lineoperated applications. Silicon npn transistors, 2n3440 datasheet, 2n3440 circuit, 2n3440 data sheet. According to the datasheet, the typical values are 2v for on. It is recommended that transistors not be allowed to operate near these values, lest their lifespan be shortened. The datasheet shows the internals of the transistor, which looks like this a rough approximation using a typical npn r2 and r3 are internal to the transistor.